| Title | Synthesis of silicon carbide thin films by ion beam sputtering |
|---|---|
| Publication Type | Articolo su Rivista peer-reviewed |
| Year of Publication | 1998 |
| Authors | Valentini, A., Convertino A., Alvisi Marco, Cingolani R., Ligonzo T., Lamendola R., and Tapfer Leander |
| Journal | Thin Solid Films |
| Volume | 335 |
| Pagination | 80-84 |
| ISSN | 00406090 |
| Keywords | Amorphous films, Film growth, Ion beam sputtering, Microstructure, Optical properties, Phase transitions, Polycrystalline materials, Silicon carbide, Sputtering, Substrates, Synthesis (chemical), Thin films, X ray diffraction analysis, X ray photoelectron spectroscopy |
| Abstract | Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700°C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700°C. © 1998 Elsevier Science S.A. All rights reserved. |
| Notes | cited By 20 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032307127&partnerID=40&md5=416bf222496ee2c089ab58afb04b310b |
| Citation Key | Valentini199880 |
